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AP-MOVPE GaInSb: Influence of V/III ratio on quality and indium incorporation

Identifieur interne : 001185 ( Main/Repository ); précédent : 001184; suivant : 001186

AP-MOVPE GaInSb: Influence of V/III ratio on quality and indium incorporation

Auteurs : RBID : Pascal:13-0201288

Descripteurs français

Pascal (Inist)
- Méthode MOVPE, Epitaxie phase vapeur, Mécanisme croissance, Pression atmosphérique, Composé organométallique, Couche épitaxique, Semiconducteur III-V, Composé III-V, Indium, Morphologie surface, Cristallinité, Propriété optique, Exciton, Antimoniure de gallium, GaInSb, Substrat indium, GaSb, Ga1-xInxSb, In, 8115K, 8110A, 8105L, 7820.

English descriptors

KwdEn :
- Atmospheric pressure, Crystallinity, Epitaxial layers, Excitons, Gallium antimonides, Growth mechanism, III-V compound, III-V semiconductors, Indium, MOVPE method, Optical properties, Organometallic compounds, Surface morphology, VPE.

Abstract

The growth of atmospheric pressure metal-organic vapour phase epitaxial (AP-MOVPE) GaSb and Ga_1-xIn_xSb layers with different nominal V/III ratios (1.0-2.0) at 550 °C, using trimethylantimony (TMSb), trimethylindium (TMIn) and triethylgallium (TEGa), is being reported. Ga_1-xIn_xSb layers were grown with a constant indium mole fraction in the vapour phase (x_v) in order to study the dependence of the indium mole fraction in the solid (x) on the V/III ratio. The surface morphology, crystallinity and optical properties of these layers are compared to those of GaSb layers with the aim of understanding their level of sensitivity to changes in the V/III ratio. It has been observed that the indium incorporation into GaSb increases with an increase in the V/III ratio. The shift of the free exciton/band-to-band transition in Ga_0.96In_0.04Sb with temperature follows the Varshni relation: E(T)=0.777-7.559 × 10^-4T²/(720+T).

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Pascal:13-0201288

Le document en format XML

<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">AP-MOVPE GaInSb: Influence of V/III ratio on quality and indium incorporation</title>
<author><name sortKey="Miya, S S" uniqKey="Miya S">S. S. Miya</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Physics, Nelson Mandela Metropolitan University, PO Box 77000</s1>
<s2>Port Elizabeth 6031</s2>
<s3>ZAF</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
</inist:fA14>
<country>Afrique du Sud</country>
<wicri:noRegion>Port Elizabeth 6031</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Wagener, V" uniqKey="Wagener V">V. Wagener</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Physics, Nelson Mandela Metropolitan University, PO Box 77000</s1>
<s2>Port Elizabeth 6031</s2>
<s3>ZAF</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
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<country>Afrique du Sud</country>
<wicri:noRegion>Port Elizabeth 6031</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Botha, J R" uniqKey="Botha J">J. R. Botha</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Physics, Nelson Mandela Metropolitan University, PO Box 77000</s1>
<s2>Port Elizabeth 6031</s2>
<s3>ZAF</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
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<country>Afrique du Sud</country>
<wicri:noRegion>Port Elizabeth 6031</wicri:noRegion>
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<publicationStmt><idno type="inist">13-0201288</idno>
<date when="2013">2013</date>
<idno type="stanalyst">PASCAL 13-0201288 INIST</idno>
<idno type="RBID">Pascal:13-0201288</idno>
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<idno type="wicri:Area/Main/Repository">001185</idno>
</publicationStmt>
<seriesStmt><idno type="ISSN">0022-0248</idno>
<title level="j" type="abbreviated">J. cryst. growth</title>
<title level="j" type="main">Journal of crystal growth</title>
</seriesStmt>
</fileDesc>
<profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Atmospheric pressure</term>
<term>Crystallinity</term>
<term>Epitaxial layers</term>
<term>Excitons</term>
<term>Gallium antimonides</term>
<term>Growth mechanism</term>
<term>III-V compound</term>
<term>III-V semiconductors</term>
<term>Indium</term>
<term>MOVPE method</term>
<term>Optical properties</term>
<term>Organometallic compounds</term>
<term>Surface morphology</term>
<term>VPE</term>
</keywords>
<keywords scheme="Pascal" xml:lang="fr"><term>Méthode MOVPE</term>
<term>Epitaxie phase vapeur</term>
<term>Mécanisme croissance</term>
<term>Pression atmosphérique</term>
<term>Composé organométallique</term>
<term>Couche épitaxique</term>
<term>Semiconducteur III-V</term>
<term>Composé III-V</term>
<term>Indium</term>
<term>Morphologie surface</term>
<term>Cristallinité</term>
<term>Propriété optique</term>
<term>Exciton</term>
<term>Antimoniure de gallium</term>
<term>GaInSb</term>
<term>Substrat indium</term>
<term>GaSb</term>
<term>Ga1-xInxSb</term>
<term>In</term>
<term>8115K</term>
<term>8110A</term>
<term>8105L</term>
<term>7820</term>
</keywords>
</textClass>
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<front><div type="abstract" xml:lang="en">The growth of atmospheric pressure metal-organic vapour phase epitaxial (AP-MOVPE) GaSb and Ga<sub>1-x</sub>
In<sub>x</sub>
Sb layers with different nominal V/III ratios (1.0-2.0) at 550 °C, using trimethylantimony (TMSb), trimethylindium (TMIn) and triethylgallium (TEGa), is being reported. Ga<sub>1-x</sub>
In<sub>x</sub>
Sb layers were grown with a constant indium mole fraction in the vapour phase (x<sub>v</sub>
) in order to study the dependence of the indium mole fraction in the solid (x) on the V/III ratio. The surface morphology, crystallinity and optical properties of these layers are compared to those of GaSb layers with the aim of understanding their level of sensitivity to changes in the V/III ratio. It has been observed that the indium incorporation into GaSb increases with an increase in the V/III ratio. The shift of the free exciton/band-to-band transition in Ga<sub>0.96</sub>
In<sub>0.04</sub>
Sb with temperature follows the Varshni relation: E(T)=0.777-7.559 × 10<sup>-4</sup>
T<sup>2</sup>
/(720+T).</div>
</front>
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<fA08 i1="01" i2="1" l="ENG"><s1>AP-MOVPE GaInSb: Influence of V/III ratio on quality and indium incorporation</s1>
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<fA09 i1="01" i2="1" l="ENG"><s1>16th International Conference on Metalorganic Vapor Phase Epitaxy</s1>
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<fA11 i1="01" i2="1"><s1>MIYA (S. S.)</s1>
</fA11>
<fA11 i1="02" i2="1"><s1>WAGENER (V.)</s1>
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<fA11 i1="03" i2="1"><s1>BOTHA (J. R.)</s1>
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<s9>ed.</s9>
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<s9>ed.</s9>
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<s9>ed.</s9>
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<fA12 i1="05" i2="1"><s1>DADGAR (Armin)</s1>
<s9>ed.</s9>
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<fA14 i1="01"><s1>Department of Physics, Nelson Mandela Metropolitan University, PO Box 77000</s1>
<s2>Port Elizabeth 6031</s2>
<s3>ZAF</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
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<fA20><s1>177-181</s1>
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<fA21><s1>2013</s1>
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<fA43 i1="01"><s1>INIST</s1>
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<s1>© 2013 INIST-CNRS. All rights reserved.</s1>
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<fA45><s0>26 ref.</s0>
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<fA60><s1>P</s1>
<s2>C</s2>
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<fA61><s0>A</s0>
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<fA66 i1="01"><s0>NLD</s0>
</fA66>
<fC01 i1="01" l="ENG"><s0>The growth of atmospheric pressure metal-organic vapour phase epitaxial (AP-MOVPE) GaSb and Ga<sub>1-x</sub>
In<sub>x</sub>
Sb layers with different nominal V/III ratios (1.0-2.0) at 550 °C, using trimethylantimony (TMSb), trimethylindium (TMIn) and triethylgallium (TEGa), is being reported. Ga<sub>1-x</sub>
In<sub>x</sub>
Sb layers were grown with a constant indium mole fraction in the vapour phase (x<sub>v</sub>
) in order to study the dependence of the indium mole fraction in the solid (x) on the V/III ratio. The surface morphology, crystallinity and optical properties of these layers are compared to those of GaSb layers with the aim of understanding their level of sensitivity to changes in the V/III ratio. It has been observed that the indium incorporation into GaSb increases with an increase in the V/III ratio. The shift of the free exciton/band-to-band transition in Ga<sub>0.96</sub>
In<sub>0.04</sub>
Sb with temperature follows the Varshni relation: E(T)=0.777-7.559 × 10<sup>-4</sup>
T<sup>2</sup>
/(720+T).</s0>
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<fC02 i1="03" i2="3"><s0>001B80A05Z</s0>
</fC02>
<fC02 i1="04" i2="3"><s0>001B70H20</s0>
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<fC03 i1="01" i2="X" l="FRE"><s0>Méthode MOVPE</s0>
<s5>01</s5>
</fC03>
<fC03 i1="01" i2="X" l="ENG"><s0>MOVPE method</s0>
<s5>01</s5>
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<fC03 i1="01" i2="X" l="SPA"><s0>Método MOVPE</s0>
<s5>01</s5>
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<fC03 i1="02" i2="3" l="FRE"><s0>Epitaxie phase vapeur</s0>
<s5>02</s5>
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<fC03 i1="02" i2="3" l="ENG"><s0>VPE</s0>
<s5>02</s5>
</fC03>
<fC03 i1="03" i2="X" l="FRE"><s0>Mécanisme croissance</s0>
<s5>03</s5>
</fC03>
<fC03 i1="03" i2="X" l="ENG"><s0>Growth mechanism</s0>
<s5>03</s5>
</fC03>
<fC03 i1="03" i2="X" l="SPA"><s0>Mecanismo crecimiento</s0>
<s5>03</s5>
</fC03>
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<s5>04</s5>
</fC03>
<fC03 i1="04" i2="3" l="ENG"><s0>Atmospheric pressure</s0>
<s5>04</s5>
</fC03>
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<s5>05</s5>
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<s5>06</s5>
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<s5>07</s5>
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<s5>07</s5>
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<s5>08</s5>
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<fC03 i1="08" i2="X" l="ENG"><s0>III-V compound</s0>
<s5>08</s5>
</fC03>
<fC03 i1="08" i2="X" l="SPA"><s0>Compuesto III-V</s0>
<s5>08</s5>
</fC03>
<fC03 i1="09" i2="3" l="FRE"><s0>Indium</s0>
<s2>NC</s2>
<s5>09</s5>
</fC03>
<fC03 i1="09" i2="3" l="ENG"><s0>Indium</s0>
<s2>NC</s2>
<s5>09</s5>
</fC03>
<fC03 i1="10" i2="3" l="FRE"><s0>Morphologie surface</s0>
<s5>10</s5>
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<s5>10</s5>
</fC03>
<fC03 i1="11" i2="X" l="FRE"><s0>Cristallinité</s0>
<s5>11</s5>
</fC03>
<fC03 i1="11" i2="X" l="ENG"><s0>Crystallinity</s0>
<s5>11</s5>
</fC03>
<fC03 i1="11" i2="X" l="SPA"><s0>Cristalinidad</s0>
<s5>11</s5>
</fC03>
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<s5>12</s5>
</fC03>
<fC03 i1="12" i2="3" l="ENG"><s0>Optical properties</s0>
<s5>12</s5>
</fC03>
<fC03 i1="13" i2="3" l="FRE"><s0>Exciton</s0>
<s5>13</s5>
</fC03>
<fC03 i1="13" i2="3" l="ENG"><s0>Excitons</s0>
<s5>13</s5>
</fC03>
<fC03 i1="14" i2="3" l="FRE"><s0>Antimoniure de gallium</s0>
<s2>NK</s2>
<s5>15</s5>
</fC03>
<fC03 i1="14" i2="3" l="ENG"><s0>Gallium antimonides</s0>
<s2>NK</s2>
<s5>15</s5>
</fC03>
<fC03 i1="15" i2="3" l="FRE"><s0>GaInSb</s0>
<s4>INC</s4>
<s5>46</s5>
</fC03>
<fC03 i1="16" i2="3" l="FRE"><s0>Substrat indium</s0>
<s4>INC</s4>
<s5>47</s5>
</fC03>
<fC03 i1="17" i2="3" l="FRE"><s0>GaSb</s0>
<s4>INC</s4>
<s5>48</s5>
</fC03>
<fC03 i1="18" i2="3" l="FRE"><s0>Ga1-xInxSb</s0>
<s4>INC</s4>
<s5>49</s5>
</fC03>
<fC03 i1="19" i2="3" l="FRE"><s0>In</s0>
<s4>INC</s4>
<s5>50</s5>
</fC03>
<fC03 i1="20" i2="3" l="FRE"><s0>8115K</s0>
<s4>INC</s4>
<s5>71</s5>
</fC03>
<fC03 i1="21" i2="3" l="FRE"><s0>8110A</s0>
<s4>INC</s4>
<s5>72</s5>
</fC03>
<fC03 i1="22" i2="3" l="FRE"><s0>8105L</s0>
<s4>INC</s4>
<s5>73</s5>
</fC03>
<fC03 i1="23" i2="3" l="FRE"><s0>7820</s0>
<s4>INC</s4>
<s5>74</s5>
</fC03>
<fN21><s1>182</s1>
</fN21>
<fN44 i1="01"><s1>OTO</s1>
</fN44>
<fN82><s1>OTO</s1>
</fN82>
</pA>
<pR><fA30 i1="01" i2="1" l="ENG"><s1>ICMOVPE-XVI International Conference on Metalorganic Vapor Phase Epitaxy</s1>
<s2>16</s2>
<s3>Busan KOR</s3>
<s4>2012-05-20</s4>
</fA30>
</pR>
</standard>
</inist>
</record>

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AP-MOVPE GaInSb: Influence of V/III ratio on quality and indium incorporation

AP-MOVPE GaInSb: Influence of V/III ratio on quality and indium incorporation

Descripteurs français

English descriptors

Abstract

Links toward previous steps (curation, corpus...)

Links to Exploration step

Le document en format XML

Pour manipuler ce document sous Unix (Dilib)

Pour mettre un lien sur cette page dans le réseau Wicri